MJE13007G Datasheet
Datasheet specifications
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Datasheet's name
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MJE13007G
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File size
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95.533
KB
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File type
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pdf
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Number of pages
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11
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Technical specifications
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJE13007G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
8A
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Power Dissipation (Pd):
80W
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Transition Frequency (fT):
14MHz
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DC Current Gain (hFE@Ic,Vce):
5@5A,5V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
3V@8A,2A
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
SWITCHMODE™
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Packaging:
Tube
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
8A
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Voltage - Collector Emitter Breakdown (Max):
400V
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Vce Saturation (Max) @ Ib, Ic:
3V @ 2A, 8A
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Current - Collector Cutoff (Max):
100µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 5A, 5V
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Power - Max:
80W
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Frequency - Transition:
14MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220AB
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Base Part Number:
MJE13
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detail:
Bipolar (BJT) Transistor NPN 400V 8A 14MHz 80W Through Hole TO-220AB
